氮化镓（GaN）具有宽的直接带隙，强的原子键，高的热导率等性质和强的抗辐照能力，不仅是短波长光电子材料，也是高温半导体器件的换代材料，GaN体系可以用来制备蓝、绿光LED，蓝紫、紫外光LD、紫外探测器以及高频大功率电子器件。

产品型号Item	GaN-FS-10	GaN-FS-15
尺寸Dimensions	10.0mm×10.5mm	14.0mm×15.0mm
孔洞密度Marco Defect Density	A Level	0 cm-2
	B Level	≤ 2 cm-2
厚度Thickness	Rank 300	300 ± 25 µm
	Rank 350	350 ± 25 µm
	Rank 400	400 ± 25 µm
晶体取向Orientation	C-axis(0001) ± 0.5°
TTV(Total Thickness Variation)	≤15 µm
弯曲度BOW	≤20 µm
导电类型Conduction Type	N-type	Semi-Insulating
电阻率Resistivity(300K)	< 0.5 Ω·cm	>106 Ω·cm
位错密度Dislocation Density	Less than 5x106 cm-2
有效面积Useable Surface Area	> 90%
抛光Polishing	Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
包装Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.